𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Manifestation of edge dislocations in photoluminescence of GaN

✍ Scribed by M.A. Reshchikov; D. Huang; L. He; H. Morkoç; J. Jasinski; Z. Liliental-Weber; S.S. Park; K.Y. Lee

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
351 KB
Volume
367
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

✦ Synopsis

A GaN layer was grown by molecular beam epitaxy on a freestanding GaN template prepared by hydride vaporphase epitaxy. Two characteristic areas have been found in the overgrown layer: a region nearly free from dislocations and a region with the density of the edge dislocations of $5 Â 10 9 cm À2 , as determined by transmission electron microscopy. Low-temperature photoluminescence spectrum from the former contained only well-known exciton lines, whereas the spectrum of the defective area contained additional lines at 3.21 and 3.35 eV. These lines are attributed to unidentified point defects trapped by the edge threading dislocations.

📜 SIMILAR VOLUMES

Dislocation mobility and photoluminescen
Dislocation mobility and photoluminescence of plastically deformed GaN
✍ I. Yonenaga; S. Itoh; T. Goto 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 191 KB

The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evalu

Distribution of Horizontal Dislocations
Distribution of Horizontal Dislocations in ELO-GaN
✍ Horibuchi, K. ;Nishimoto, S. ;Sueyoshi, M. ;Kuwano, N. ;Miyake, H. ;Hiramatsu, K 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 194 KB 👁 2 views