Dislocation mobility and photoluminescence of plastically deformed GaN

✍ Scribed by I. Yonenaga; S. Itoh; T. Goto

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 191 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.040

✦ Synopsis

The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evaluated. Deformed GaN shows a drastic reduction of PL intensity, suggesting that newly formed dislocations give rise to non-radiative recombination centers.