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Dislocation photoluminescence in plastically deformed germanium

✍ Scribed by S.A. Shevchenko; A.N. Tereshchenko


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
222 KB
Volume
404
Category
Article
ISSN
0921-4526

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Dislocation mobility and photoluminescen
✍ I. Yonenaga; S. Itoh; T. Goto πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 191 KB

The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evalu