Dislocation mobility and photoluminescen
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I. Yonenaga; S. Itoh; T. Goto
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Article
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2003
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Elsevier Science
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English
β 191 KB
The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evalu