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Dislocation substructures in plastically deformed A1N

✍ Scribed by V Audurier; J.L Demenet; J Rabier


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
407 KB
Volume
164
Category
Article
ISSN
0921-5093

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The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evalu