Decay of oxygen solid solution in plastically deformed silicon

✍ Scribed by Yarykin, N. ;Vdovin, V. I.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 147 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200460519

✦ Synopsis

Abstract

Decay of the oxygen solid solution in silicon during annealing at 550–700 °C is studied by the IR absorption technique in the single crystalline samples subjected to the plastic deformation to a high dislocation density at 680 °C. The deformation is shown to significantly enhance the rate of the decay in the whole temperature range studied. Based on the simple model, which assumes the heterogeneous oxygen aggregation at dislocations, the effective oxygen diffusivity is calculated from the experimental data. The activation energy of oxygen diffusion in this temperature range is found to be about 1.6 eV, which is essentially lower than that for the isolated interstitial oxygen atom. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)