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The dislocation structure of plastically deformed silicon with different sample orientation

✍ Scribed by Kirscht, F.-G. ;Doerschel, J.

Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
102 KB
Volume
58
Category
Article
ISSN
0031-8965

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## Abstract The recent observation of perfect dislocations at high stress and low temperature in silicon [J. Rabier, P. Cordier, J. L. Demenet, and H. Garem, Mater. Sci. Eng. A **309/310**, 74 (2001)] in accordance with the calculations of Duesbery and Joos [M. S. Duesbery and B. Joos, Philos. Mag.