𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold

✍ Scribed by Aristov, V. V. ;Bondarenko, I. E. ;Heydenreich, J. ;Khodos, T. I. ;Snighireva, I. I. ;Werner, P. ;Yakimov, E. B. ;Yarykin, N. A.


Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
794 KB
Volume
102
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Defect Structure in Te-doped GaAs single
✍ Prof. Dr. Peter Paufler; Dr. Gerald Wagner; Dipl.-Krist. Katrin Grosse πŸ“‚ Article πŸ“… 1993 πŸ› John Wiley and Sons 🌐 English βš– 523 KB

## Twins and Stacking Faults At temperatures above the brittle-to-ductile transition (490 "C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [00 11 direction: (i) twins and stacking faults (500 ..\_ 520 "C), (ii) slip zones o

Defect structure of silicon crystals imp
✍ Shalimov, Artem ;Shcherbachev, Kirill D. ;Bak-Misiuk, Jadwiga ;Misiuk, Andrzej πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 517 KB

## Abstract Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 Γ— 10^16^ cm^–2^. After implantation, Si:H samples were annealed at 450 and 650 Β°C under atmospheric and enhanced hydrostatic pressure (1.1 GPa). Defect structure of as‐implanted and processed Si:H was