Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold
β Scribed by Aristov, V. V. ;Bondarenko, I. E. ;Heydenreich, J. ;Khodos, T. I. ;Snighireva, I. I. ;Werner, P. ;Yakimov, E. B. ;Yarykin, N. A.
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 794 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0031-8965
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## Twins and Stacking Faults At temperatures above the brittle-to-ductile transition (490 "C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [00 11 direction: (i) twins and stacking faults (500 ..\_ 520 "C), (ii) slip zones o
## Abstract Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 Γ 10^16^ cm^β2^. After implantation, Si:H samples were annealed at 450 and 650 Β°C under atmospheric and enhanced hydrostatic pressure (1.1 GPa). Defect structure of asβimplanted and processed Si:H was