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The mechanism of defect creation and passivation at the SiC/SiO 2 interface

✍ Scribed by Deák, Peter; Knaup, Jan M; Hornos, Tamás; Thill, Christoph; Gali, Adam; Frauenheim, Thomas

Book ID: 120990669
Publisher: Institute of Physics
Year: 2007
Tongue: English
Weight: 567 KB
Volume: 40
Category: Article
ISSN: 0022-3727
DOI: 10.1088/0022-3727/40/20/S09

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