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Phosphorous passivation of the SiO2/4H–SiC interface

✍ Scribed by Y.K. Sharma; A.C. Ahyi; T. Issacs-Smith; X. Shen; S.T. Pantelides; X. Zhu; L.C. Feldman; J. Rozen; J.R. Williams


Book ID
113916094
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
865 KB
Volume
68
Category
Article
ISSN
0038-1101

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Thermal oxidation of 6H-SiC was investigated by ion beam analysis techniques. The mechanisms of oxygen transport and incorporation were accessed by sequential oxidations in dry O 2 enriched or not in the 18 O isotope and subsequent determinations of the 18 O profiles. After sequential 16 O 2 / 18 O