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Surface-Passivation Effects on the Performance of 4H-SiC BJTs

✍ Scribed by Ghandi, R.; Buono, B.; Domeij, M.; Esteve, R.; Schöner, A.; Jisheng Han; Dimitrijev, S.; Reshanov, S.A.; Zetterling, C.-M.; Östling, M.

Book ID
114620235
Publisher
IEEE
Year
2011
Tongue
English
Weight
466 KB
Volume
58
Category
Article
ISSN
0018-9383

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## Abstract 4H‐SiC bipolar junction transistors (BJTs) are one of the promising candidates for next‐generation power devices. 4H‐SiC BJTs have the advantages of low on‐resistance and high temperature capability. On the other hand, high common emitter current gain is required from a practical use po