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Temperature dependence of the current gain in power 4H-SiC NPN BJTs

✍ Scribed by Ivanov, P.A.; Levinshtein, M.E.; Agarwal, A.K.; Krishnaswami, S.; Palmour, J.W.

Book ID: 114618247
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 164 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2006.872701

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