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Temperature dependence of the quantum efficiency of 4H-SiC-based Schottky photodiodes

✍ Scribed by T. V. Blank; Yu. A. Gol’dberg; E. V. Kalinina; O. V. Konstantinov; A. O. Konstantinov; A. Hallen

Book ID
110128157
Publisher
SP MAIK Nauka/Interperiodica
Year
2001
Tongue
English
Weight
50 KB
Volume
27
Category
Article
ISSN
1063-7850

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✍ E. Vittone; V. Rigato; P. Olivero; F. Nava; C. Manfredotti; A. LoGiudice; Y. Gar 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 395 KB

Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for