Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for
✦ LIBER ✦
Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
✍ Scribed by Aydın, Mehmet Enver; Yıldırım, Nezir; Turut, Abdulmecit
- Book ID
- 118166008
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 739 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0021-8979
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