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Electron Transport at the SiC/SiO2 Interface

✍ Scribed by Ouisse, T.


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
458 KB
Volume
162
Category
Article
ISSN
0031-8965

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The atomic structure and structural stabilities of silicon oxycarbide SiO x C y phase formed at the SiC/SiO 2 interface were studied using ab initio pseudopotential method. The total energies and the cohesive energies of the SiO x C y at different composition: SiC, SiO 1/4 C 3/4 , SiO 1/2 C 1/2 , Si