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The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures

✍ Scribed by Gaska, R.; Yang, J. W.; Bykhovski, A. D.; Shur, M. S.; Kaminski, V. V.; Soloviov, S. M.


Book ID
125457776
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
309 KB
Volume
72
Category
Article
ISSN
0003-6951

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con