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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

✍ Scribed by G. Martı́nez-criado; A. Cros; A. Cantarero; O. Ambacher; C. R. Miskys; R. Dimitrov; M. Stutzmann; J. Smart; J. R. Shealy

Book ID: 126240768
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 276 KB
Volume: 90
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1408268

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con