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Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaNâGaN heterostructures

✍ Scribed by Lin, Zhaojun; Lu, Wu

Book ID: 120677234
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 307 KB
Volume: 99
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2158137

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Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaNâGaN heterostructures

Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaNâGaN heterostructures