𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation

✍ Scribed by D.I. Tetelbaum; S.A. Trushin; A.N. Mikhaylov; V.K. Vasil'ev; G.A. Kachurin; S.G. Yanovskaya; D.M. Gaponova

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
151 KB
Volume
16
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

X-Ray topographic study of the influence
X-Ray topographic study of the influence of thermal annealing on the bending of 49BF2+-implanted Si wafers
✍ Dr. I. S. Vassilev; Dr. Z. Furmanik; I. N. Petrov; P. A. Botev; Prof. Dr. J. Aul πŸ“‚ Article πŸ“… 1982 πŸ› John Wiley and Sons 🌐 English βš– 577 KB

## Abstract The influence of thermal annealing on the image contrast of the boundaries of ^49^BF~2~^+^‐implanted regions in Si is investigated by means of X‐ray topography. The contrast is used for studying the wafer bending and the stress types. It is shown that the final state of deformation is d