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Silicon excess and thermal annealing effects on the photoluminescence of SiO2 and silicon rich oxide super enriched with siliscon implantation

✍ Scribed by D. Berman; M. Aceves; A. Gallegos; A. Morales; L. R. Berriel; J. Carrillo; F. Flores; C. Falcony; C. Domínguez; A. Llobera; M. Riera; J. Pedraza

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
147 KB
Volume
1
Category
Article
ISSN
1862-6351

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Silicon capped by thermal oxide has been implanted with 1 • 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality a