✦ LIBER ✦

The influence of source and drain junction depth on the short-channel effect in MOSFETs

✍ Scribed by Sleva, S.; Taur, Y.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A subthreshold surface potential model f

✍ Baishya, S.; Mallik, A.; Sarkar, C.K. 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 405 KB

Effects of source/drain implants on shor

✍ Cheng-Liang Huang; Khalil, N.A.; Arora, N.D.; Zetterlund, B.; Bair, L.A. 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 631 KB

SiGe source/drain structure for the supp

✍ Nishiyama, A.; Matsuzawa, K.; Takagi, S. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 151 KB

Determination of physical mechanisms con

✍ A. Ortiz-Conde; J.J. Liou; R. Narayanan; F.J. García Sánchez 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 374 KB

The influence of tilted source-drain imp

✍ Baker, F.K.; Pfiester, J.R. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 609 KB

Effects of carrier-velocity saturation o

✍ Lee, M. B. ;Lee, J. I. ;Kang, K. N. ;Yoon, K. S. ;Hong, S. ;Lim, K. Y. 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 203 KB