✦ LIBER ✦

Effects of carrier-velocity saturation on the characteristics of short channel MOSFETs with lightly doped drains

✍ Scribed by Lee, M. B. ;Lee, J. I. ;Kang, K. N. ;Yoon, K. S. ;Hong, S. ;Lim, K. Y.

Publisher: John Wiley and Sons
Year: 1992
Tongue: English
Weight: 203 KB
Volume: 131
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211310149

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optical effects on the current-voltage c

Optical effects on the current-voltage characteristics of lightly doped drain silicon MOSFETs

✍ Sheng-Lyang Jang; Young-Shying Chen; Ping-Chen Chang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 602 KB

A simple model of the drain saturation v

A simple model of the drain saturation voltage dependence with gate voltage for short-channel MOSFETs

✍ Ghibaudo, G. 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 206 KB

Influence of drain bias voltage on deter

Influence of drain bias voltage on determining the effective channel length and series resistance of drain-engineered MOSFETs below saturation

✍ S.L. Chen; Jeng Gong 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 441 KB

Experimental study on isolation edge eff

Experimental study on isolation edge effects in the short channel characteristics of metal oxide semiconductor field effect transistors (MOSFETs)

✍ Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 265 KB

We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati

A one-dimensional theory on the effects

A one-dimensional theory on the effects of diffusion current and carrier velocity saturation on E-type IGFET current-voltage characteristics

✍ Luong Mo Dang 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 675 KB

On the validity of the gradual channel a

On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation

✍ Kurt Lehovec; W.G. Seeley 📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 514 KB