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SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs

✍ Scribed by Nishiyama, A.; Matsuzawa, K.; Takagi, S.

Book ID: 114538690
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 151 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.925236

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