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[Japan Soc. Appl. Phys 1995 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (6-8 June 1995)] 1995 Symposium on VLSI Technology. Digest of Technical Papers - The influence of oxygen at epitaxial Si/Si substrate interface for 0.1 μm epitaxial Si channel N-MOSFETs grown by UHV-CVD

✍ Scribed by Ohguro, T.; Sugiyama, N.; Imai, K.; Usuda, K.; Saito, M.; Yoshitomi, T.; Ono, M.; Momose, H.S.; Iwai, H.

Book ID: 126716583
Publisher: Japan Soc. Appl. Phys
Year: 1995
Weight: 208 KB
Category: Article
ISBN-13: 9780780326026
DOI: 10.1109/VLSIT.1995.520840

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