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A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions

✍ Scribed by Baishya, S.; Mallik, A.; Sarkar, C.K.


Book ID
114618130
Publisher
IEEE
Year
2006
Tongue
English
Weight
405 KB
Volume
53
Category
Article
ISSN
0018-9383

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