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The influence of oxygen on the formation of donor centers in silicon layers implanted with erbium and oxygen ions

✍ Scribed by O. V. Aleksandrov; A. O. Zakhar’in; N. A. Sobolev

Book ID
110143467
Publisher
Springer
Year
2005
Tongue
English
Weight
80 KB
Volume
39
Category
Article
ISSN
1063-7826

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Donor formation in silicon owing to ion
Donor formation in silicon owing to ion implantation of the rare earth metal erbium
✍ F.P. Widdershoven; J.P.M. Naus 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 317 KB

Schottky diodes in n-and pope silicon, implanted with erbium and subsequently annealed at 900 °C were characterized with capacitance-voltage (CV) and deep level transient spectroscopy (DL TS) techniques. The implanted samples showed an excess donor concentration with a depth profile similar to an er