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Influence of oxygen on the dislocation related luminescence centers in silicon

โœ Scribed by E. A. Steinman

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
137 KB
Volume
2
Category
Article
ISSN
1862-6351

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Influence of Dislocations on Nitrogenโ€“Ox
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โœ Yang, Deren ;Que, Duanlin ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 119 KB ๐Ÿ‘ 2 views

The influence of dislocations on nitrogenยฑoxygen (NยฑO) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that NยฑO complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the NยฑO complexes in NCZ silicon with disl