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Influence of oxygen on the recombination strength of dislocations in silicon wafers

✍ Scribed by J.J. Simon; I. Périchaud

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 405 KB
Volume: 36
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(95)01299-0

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