Influence of Dislocations on Nitrogen–Ox
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Yang, Deren ;Que, Duanlin
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Article
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1999
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John Wiley and Sons
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English
⚖ 119 KB
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The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with disl