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Influence of high-magnetic-field on dislocation–oxygen interaction in silicon

✍ Scribed by I. Yonenaga; K. Takahashi; T. Taishi; Y. Ohno


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
126 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with disl