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Modelling of recombination activity and passivation by hydrogen of dislocations in silicon wafers

✍ Scribed by H. El Ghitani; S. Martinuzzi

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
280 KB
Volume
4
Category
Article
ISSN
0921-5107

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The electrical activity of dislocations has been evidenced by LBIC scanning measurements through two different distributions of dislocations for which theoretical models leading to the recombination velocity could be applied. A close experimental correlation was found between photocurrent and disloc