Reproducible formation of well-controlled dislocation structures is a prerequisite to use dislocations as an active part of devices. Regular dislocation networks have been formed at the interface by Si wafer direct bonding. The barriers of interface were generally smaller than 100 meV. The temperatu
โฆ LIBER โฆ
Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding
โ Scribed by Anton Bondarenko; Oleg Vyvenko; Nikolay Bazlov; Oleg Kononchuk
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 332 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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