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LBIC measurements of the recombining activity of dislocations in float zone silicon

✍ Scribed by J.L. Mariani; B. Pichaud; F. Minari; S. Martinuzzi

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
651 KB
Volume
4
Category
Article
ISSN
0921-5107

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✦ Synopsis

The electrical activity of dislocations has been evidenced by LBIC scanning measurements through two different distributions of dislocations for which theoretical models leading to the recombination velocity could be applied. A close experimental correlation was found between photocurrent and dislocation density. The models led to the same recombination velocity for dislocations Sd -~ 103 cm s--i. The role of oxygen and of temperature on the activity of dislocations is discussed.

πŸ“œ SIMILAR VOLUMES

Investigations for the improvement of th
Investigations for the improvement of the radial doping homogeneity of dislocation-free floating zone silicon crystals
✍ Dr. Ing. W. SchrΓΆder; Dr. rer. nat. H.-J. Rost; Dr. rer. nat. E. Wolf πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 606 KB

## Investigations for the Improvement of the Radial Doping Homogeneity of Dislocation-free Floating Zone Silicon Crystals I n order t o improve the doping inhomogeneities of dislocation free F Z Silicon crystals with diameters 2 75 mm investigations were carried out t o influence the shape and cur