On the Reasons Leading to an Appearance
β
Dr.; Prof. K. D. Glinchuk; Dr.; Prof. A. V. Prokhorovich
π
Article
π
1995
π
John Wiley and Sons
π
English
β 227 KB
π 1 views
It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom