✦ LIBER ✦
On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating “Stoichiometric” GaAs Crystals
✍ Scribed by Dr.; Prof. K. D. Glinchuk; Dr.; Prof. A. V. Prokhorovich
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 227 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
✦ Synopsis
It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atoms (then the correlated dependence T vs N, appears) or of As atoms (then the anticorrelated dependence T vs Nd appears) which inevitably exists even in "stoichiometric" GaAs crystals (i.e. in GaAs crystals of "stoichiometric" composition).