Passivation of dislocations in silicon by hydrogenation

✍ Scribed by I. Perichaud; H.El Ghitani; S. Martinuzzi

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 258 KB
• Volume: 170
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(91)90176-f

✦ Synopsis

We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximate pinning levels and interace charges of the RTS.