Passivation of dislocations in silicon b
β
I. Perichaud; H.El Ghitani; S. Martinuzzi
π
Article
π
1991
π
Elsevier Science
π
English
β 258 KB
We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximat