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Hydrogen passivation of dislocations in silicon

✍ Scribed by W.M.Ranjith Divigalpitiya; S.Roy Morrison; G. Vercruysse; A. Praet; W.P. Gomes


Publisher
Elsevier Science
Year
1987
Weight
553 KB
Volume
15
Category
Article
ISSN
0165-1633

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Passivation of dislocations in silicon b
✍ I. Perichaud; H.El Ghitani; S. Martinuzzi πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 258 KB

We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximat