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Hydrogen Enhanced Dislocation Glides in Silicon

โœ Scribed by Yamashita, Y. ;Jyobe, F. ;Kamiura, Y. ;Maeda, K.

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
172 KB
Volume
171
Category
Article
ISSN
0031-8965

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We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximat