Influence of Dislocations on NitrogenβOx
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Yang, Deren ;Que, Duanlin
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Article
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1999
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John Wiley and Sons
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English
β 119 KB
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The influence of dislocations on nitrogenΒ±oxygen (NΒ±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that NΒ±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the NΒ±O complexes in NCZ silicon with disl