For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi
β¦ LIBER β¦
The influence of some optical parameters on IR spectroscopy of oxygen in silicon
β Scribed by J.A.A. Engelbrecht; O.J. Lombard
- Publisher
- Elsevier Science
- Year
- 1986
- Weight
- 633 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0020-0891
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