✦ LIBER ✦

The influence of oxygen during the irradiation of silicon and germanium

✍ Scribed by Dr. I. G. Salisbury

Publisher: John Wiley and Sons
Year: 1981
Tongue: English
Weight: 218 KB
Volume: 16
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.19810160128

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The diffusion of oxygen in silicon and g

The diffusion of oxygen in silicon and germanium

✍ C. Haas 📂 Article 📅 1960 🏛 Elsevier Science 🌐 English ⚖ 322 KB

The configuration and diffusion of isola

The configuration and diffusion of isolated oxygen in silicon and germanium

✍ J.W. Corbett; R.S. McDonald; G.D. Watkins 📂 Article 📅 1964 🏛 Elsevier Science 🌐 English ⚖ 623 KB

The valence band relaxation energies of

The valence band relaxation energies of silicon and germanium during photoelectron emission

✍ R.T. Poole 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 232 KB

The valence band relaxation energies of the intrinsic wmiconductors silicon and germanium are estimated using a classical and a quantum-lnechanic;ll method and are found to be snndar in magnitude to values reported for ronductors and msulators. It is shown that the XI'S electronic valcncc band struc

Geometrical configuration of interstitia

Geometrical configuration of interstitial oxygen in silicon and in germanium

✍ A. Lizón-Nordström; Félix Yndurain 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 363 KB

Calorimetric determination of the heat o

Calorimetric determination of the heat of adsorption of oxygen on evaporated films of germanium and silicon

✍ D. Brennan; D.O. Hayward; B.M.W. Trapnell 📂 Article 📅 1960 🏛 Elsevier Science 🌐 English ⚖ 642 KB

The diffusion of silicon in germanium

✍ J. Räisänen; J. Hirvonen; A. Anttila 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 382 KB