The valence band relaxation energies of silicon and germanium during photoelectron emission

✍ Scribed by R.T. Poole

• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 232 KB
• Volume: 54
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(78)80088-8

✦ Synopsis

The valence band relaxation energies of the intrinsic wmiconductors silicon and germanium are estimated using a classical and a quantum-lnechanic;ll method and are found to be snndar in magnitude to values reported for ronductors and msulators. It is shown that the XI'S electronic valcncc band structure\ of !%I and Ge reflect the cohesive energlca when the binding ener+ dre corrected for relavatlon effects.