Donor formation in silicon owing to ion implantation of the rare earth metal erbium

✍ Scribed by F.P. Widdershoven; J.P.M. Naus

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 317 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90218-3

✦ Synopsis

Schottky diodes in n-and pope silicon, implanted with erbium and subsequently annealed at 900 °C were characterized with capacitance-voltage (CV) and deep level transient spectroscopy (DL TS) techniques. The implanted samples showed an excess donor concentration with a depth profile similar to an erbium concentration profile, measured with secondaly ion mass spectroscopy (SIMS), 7he peak concentration, however, is one order-of-magnitude below the estimated erbium peak concentration. DLTS measurements yielded one dominant donor-like electron trap in an n-~pe sample, with an activation energ O, of 0.266 eV and a depth profile similar to the CV profile. The peak concentration, however, is 1.5 orders-of-magnitude below that of the C V profile. From the consistency of the DLTS depth profile~" peak position with that of the CV and SIMS depth profiles it is concluded that the measured activation energy is a reasonable estimate of the trap ~" Gibbs free energy.