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Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

✍ Scribed by V. V. Artamanov; M. Ya. Valakh; N. I. Klyui; V. P. Mel’nik; A. B. Romanyuk; B. N. Romanyuk; V. A. Yukhimchuk

Book ID: 110119989
Publisher: Springer
Year: 1998
Tongue: English
Weight: 91 KB
Volume: 32
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1187611

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