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The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy

✍ Scribed by Romano, L. T.; Myers, T. H.

Book ID: 121793862
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 533 KB
Volume: 71
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.120367

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