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Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy

✍ Scribed by Dong, Y.; Feenstra, R. M.; Greve, D. W.; Moore, J. C.; Sievert, M. D.; Baski, A. A.

Book ID: 126891454
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 447 KB
Volume: 86
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1890482

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