## Abstract The large signal time domain simulation of the 40 GHz oneβstage amplifier with the AlGaN/GaNβHEMT is performed by means of the coupled physical deviceβcircuit simulation, in which the Monte Carlo (MC) device simulator is incorporated into the embedding circuit as a realistic physicsβbas
The influence of device physical parameters of HEMT large-signal characteristics
β Scribed by Weiss, M.; Pavldis, D.
- Book ID
- 114552082
- Publisher
- IEEE
- Year
- 1988
- Tongue
- English
- Weight
- 889 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0018-9480
- DOI
- 10.1109/22.3511
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## Abstract A nonlinear lumpedβelement model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__βband hybrid amplifier. Excellent agreement between measurements and simulated p