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Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

✍ Scribed by Lu, C Y; Bahat-Treidel, E; Hilt, O; Lossy, R; Chaturvedi, N; Chang, E Y; Würfl, J; Tränkle, G

No coin nor oath required. For personal study only.

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