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Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage
✍ Scribed by Saito, W.; Kuraguchi, M.; Takada, Y.; Tsuda, K.; Omura, I.; Ogura, T.
- Book ID
- 114617693
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 506 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0018-9383
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