𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

✍ Scribed by Zhou, Xingye; Feng, Zhihong; Wang, Li; Wang, Yuangang; Lv, Yuanjie; Dun, Shaobo; Cai, Shujun

Book ID
125826739
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
687 KB
Volume
100
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

On the discrimination between bulk and s
On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics
✍ Ε€apajna, Milan ;Jimenez, Jose L. ;Kuball, Martin πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 250 KB

## Abstract Drain current trapping characteristics is shown to be able to distinguish between bulk and surface traps. This is illustrated on stressed and unstressed AlGaN/GaN HEMTs with different surface oxygen content. A trapping characteristic with positive amplitude is shown to be related to sur