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The Influence of Defects on the Morphology of Si (111) Etched in NH 4 F

โœ Scribed by Zhou, Hui; Fu, Joseph; Silver, Richard M.


Book ID
126201019
Publisher
American Chemical Society
Year
2005
Tongue
English
Weight
935 KB
Volume
109
Category
Article
ISSN
0022-3654

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Etching mechanism and atomic structure o
โœ P. Allongue; V. Kieling; H. Gerischer ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 943 KB

The atomic structure of H-terminated Si( 111) surfaces is investigated by in-situ STM and electrochemical measurements in NH,F solutions of 2 < pH < 8. Etch rate measurements show only a slight pH-dependence between pH 2 and 14, when including alkaline solutions. Electrochemical results indicate tha