Etching mechanism and atomic structure o
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P. Allongue; V. Kieling; H. Gerischer
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Article
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1995
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Elsevier Science
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English
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The atomic structure of H-terminated Si( 111) surfaces is investigated by in-situ STM and electrochemical measurements in NH,F solutions of 2 < pH < 8. Etch rate measurements show only a slight pH-dependence between pH 2 and 14, when including alkaline solutions. Electrochemical results indicate tha