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Electron-energy-loss characterization of the H-terminated Si(111) and Si(100) surfaces obtained by etching in NH4F

✍ Scribed by P. Dumas; Y.J. Chabal


Book ID
107735054
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
626 KB
Volume
181
Category
Article
ISSN
0009-2614

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The atomic structure of H-terminated Si( 111) surfaces is investigated by in-situ STM and electrochemical measurements in NH,F solutions of 2 < pH < 8. Etch rate measurements show only a slight pH-dependence between pH 2 and 14, when including alkaline solutions. Electrochemical results indicate tha